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PD- 93759A
IRLMS4502
HEXFET(R) Power MOSFET
l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel
D
1
6
A D
VDSS = -12V
D
2 5
D
G
3
4
S
RDS(on) = 0.042
T o p V ie w
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
Micro6
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-12 -5.5 -4.4 -44 1.7 1.1 0.013 28 12 -55 to + 150
Units
V A
W W/C mJ V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
75
Units
C/W
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01/18/01
IRLMS4502
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. -12 --- --- --- -0.60 8.8 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.003 --- V/C Reference to 25C, I D = -1mA --- 0.042 VGS = -4.5V, ID = -5.5A --- 0.075 VGS = -2.5V, ID = -4.7A --- --- V VDS = V GS, ID = -250A --- --- S VDS = -10V, ID = -5.5A --- -1.0 VDS = -12V, VGS = 0V A --- -25 VDS = -9.6V, VGS = 0V, T J = 125C --- -100 VGS = -12V nA --- 100 VGS = 12V 22 33 ID = -5.5A 3.9 5.8 nC VDS = -10V 11 16 VGS = -5.0V 18 --- VDD = -6.0V 460 --- ID = -1.0A ns 130 --- RG = 4.5 250 --- RD = 6.0 1820 --- VGS = 0V 1110 --- pF VDS = -10V 1070 --- = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 31 21 -1.7 A -44 -1.2 46 32 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.7A, VGS = 0V TJ = 25C, I F = -5.5A di/dt = -100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Surface mounted on FR-4 board, t 5sec. Starting TJ = 25C, L = 1.8mH
RG = 25, IAS = -5.5A. (See Figure 12)
Pulse width 400s; duty cycle 2%.
2
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IRLMS4502
1000
-I D , Drain-to-Source Current (A)
100
-I D , Drain-to-Source Current (A)
VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP
100
VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP
10
-2.25V
10
-2.25V
1 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
ID = -5.5A
R DS(on) , Drain-to-Source On Resistance (Normalized)
-I D , Drain-to-Source Current (A)
1.5
100
1.0
TJ = 25 C TJ = 150 C
0.5
10 2.0
V DS = -15V 20s PULSE WIDTH 5.0 6.0 3.0 4.0 7.0
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLMS4502
2600 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + C ds gd 15
ID = -5.5A
-VGS , Gate-to-Source Voltage (V)
2200
12
VDS = -10V
C, Capacitance(pF)
Ciss
1800
9
6
1400
Coss Crss
1000 1 10 100
3
0 0 10 20 30 40
-V DS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED BY R
DS(on)
-ISD , Reverse Drain Current (A)
10us
10
-ID , Drain Current (A) I
TJ = 150 C
10
100us
TJ = 25 C
1
1ms
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2 1.4 1.6 1.8
1 0.1
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLMS4502
6.0 80
EAS , Single Pulse Avalanche Energy (mJ)
5.0
-ID , Drain Current (A)
60
ID -2.5A -4.4A BOTTOM -5.5A TOP
4.0
3.0
40
2.0
20
1.0
0.0 25 50 75 100 125 150
0 25 50 75 100 125 150
TC , Case Temperature ( C)
Starting TJ , Junction Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Maximum Avalanche Energy Vs. Drain Current
100 D = 0.50
Thermal Response (Z thJA )
0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.1 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 1 0.01 10
P DM t1 t2
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLMS4502
Package Outline
Micro6
3. 00 (. 11 8 ) 2. 80 (. 11 1 )
L EAD ASSIG N M EN T S
-B D D S
R EC O M MEN D ED FO O T PR IN T
2 X 0 . 95 (.0 375 ) 6 X (1 .06 (.0 42 )
1 .75 (.0 68 ) 1 .50 (.0 60 ) -A -
6 1
5 2
4 3
3 .00 (.11 8 ) 2 .60 (.10 3 )
6 1
5 2
4 3 2.2 0 (.0 87 )
0. 95 ( .03 75 ) 2X 0.1 5 6X
D 0.5 0 (.0 19 ) 0.3 5 (.0 14 )
D
G 6X 0. 6 5 (. 02 5 )
(.00 6 ) M C A S B S
0 -10 1 .30 (.0 51 ) 0 .90 (.0 36 ) -C 0 .15 (.00 6 ) M A X. 1.4 5 (. 057 ) 0.9 0 (. 036 ) 0 .10 (.00 4 ) 6 SUR F AC ES
O
O
6X
0 .20 (.00 7 ) 0 .09 (.00 4 )
0.6 0 (. 023 ) 0.1 0 (. 004 )
N O TE S : 1. D IM E N S IO N IN G & T O LE R A N C I N G PE R A NS I Y 1 4.5 M -198 2. 2. C O N T R O L LIN G D IM E NS IO N : M IL LI M E TE R . 3. D IM E N S IO N S A R E S HO W N IN M IL LIM E T E R S (I N C H E S ).
Part Marking Information
Micro6
THIS IS AN IRLMS6702 WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR PART NUMBER DATE CODE 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D
2C YW
TOP
WAFER LOT NUMBER CODE
XXXX
BOT TOM
24 25 26
X Y Z
PART NUMBER CODE REFERENCE: 2A = IRLMS 1902 2B = IRLMS 1503 2C = IRLMS 6702 2D = IRLMS 5703 2E = IRLMS 6802 2F = IRLMS 4502 2G = IRLMS 2002 2H = IRLMS 6803
WW = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D
DATE CODE EXAMPLES: YWW = 9603 = 6C YWW = 9632 = FF
50 51 52
X Y Z
6
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IRLMS4502
Tape & Reel Information
Micro6
8mm
4mm
F E E D D IR E C T IO N
N O TE S : 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
17 8.00 ( 7 .0 08 ) MAX.
9.9 0 ( .39 0 ) 8.4 0 ( .33 1 ) NO TES: 1. C O N T R O L LIN G D IM E N S IO N : M ILLIM ET E R . 2. O U T L IN E C O N F O R M S TO E IA -4 81 & E IA -541 .
This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/01
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